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DMN3190LDW-13 Field Effect Transistor Transistors FETs MOSFETs Arrays

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DMN3190LDW-13 Field Effect Transistor Transistors FETs MOSFETs Arrays

DMN3190LDW-13 Field Effect Transistor Transistors FETs MOSFETs Arrays
DMN3190LDW-13 Field Effect Transistor Transistors FETs MOSFETs Arrays

Gambar besar :  DMN3190LDW-13 Field Effect Transistor Transistors FETs MOSFETs Arrays

Detail produk:
Tempat asal: Asli
Syarat-syarat pembayaran & pengiriman:
Kuantitas min Order: bisa dinegosiasikan
Harga: Negotiable
Waktu pengiriman: bisa dinegosiasikan
Syarat-syarat pembayaran: T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Menyediakan kemampuan: 100000

DMN3190LDW-13 Field Effect Transistor Transistors FETs MOSFETs Arrays

Deskripsi
Nomor Bagian: DMN3190LDW-13 Pabrikan: Dioda Dimasukkan
Keterangan: MOSFET 2N-CH 30V 1A SOT363 kategori: Transistor - FET, MOSFET - Array
Keluarga: Transistor - FET, MOSFET - Array

DMN3190LDW-13 Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1A
Rds On (Max) @ Id, Vgs 190 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 87pF @ 20V
Power - Max 320mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

DMN3190LDW-13 Packaging

Detection

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