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FDMB3800N Field Effect Transistor Transistors FETs MOSFETs Arrays

Kategori:
Transistor Efek Medan
Harga:
Negotiable
Cara Pembayaran:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spesifikasi
Nomor Bagian:
FDMB3800N
Pabrikan:
Fairchild/ON Semikonduktor
Keterangan:
MOSFET 2N-CH 30V 4.8A MIKROFET
kategori:
Transistor - FET, MOSFET - Array
Keluarga:
Transistor - FET, MOSFET - Array
Seri:
PowerTrench®
Pengantar

FDMB3800N Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.8A
Rds On (Max) @ Id, Vgs 40 mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 465pF @ 15V
Power - Max 750mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-MLP, MicroFET (3x1.9)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

FDMB3800N Packaging

Detection

FDMB3800N Field Effect Transistor Transistors FETs MOSFETs ArraysFDMB3800N Field Effect Transistor Transistors FETs MOSFETs ArraysFDMB3800N Field Effect Transistor Transistors FETs MOSFETs ArraysFDMB3800N Field Effect Transistor Transistors FETs MOSFETs Arrays

Kirim RFQ
Saham:
MOQ:
Negotiable